수소화된 나노결정 실리콘 박막의 기판온도에 따른 나노구조 변화

Title
수소화된 나노결정 실리콘 박막의 기판온도에 따른 나노구조 변화
Other Titles
Variation in the Nanostructural Features of the nc-Si:H Thin Films with Substrate Temperature
Authors
조남희
Keywords
PECVD, nc-Si:H, substrate temperature, FT-IR, EELS.
Issue Date
2013
Publisher
한국재료학회지
Series/Report no.
한국재료학회지; 제23권 제7호 pp 359~365
URI
http://dx.doi.org/10.3740/MRSK.2013.23.7.359
http://dspace.inha.ac.kr/handle/10505/34379
ISSN
1225-0562
Appears in Collections:
College of Engineering(공과대학) > Materials Science & Engineering (신소재공학) > Local Access Journal, Reports (신소재공학 논문, 보고서)

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