Effect of Ultrathin Al2O3 Layer on TiO2 Surface in CdS/CdSe Co-Sensitized Quantum Dot Solar Cells

Title
Effect of Ultrathin Al2O3 Layer on TiO2 Surface in CdS/CdSe Co-Sensitized Quantum Dot Solar Cells
Authors
이완인
Keywords
Quantum dot sensitized solar cells (QDSSC), CdS/CdSe, Al2O3, Blocking layer, Open circuit voltage (Voc)
Issue Date
2013
Publisher
BULLETIN OF THE KOREAN CHEMICAL SOCIETY
Series/Report no.
BULLETIN OF THE KOREAN CHEMICAL SOCIETY ; Vol34 no.2 Startpage 411 Endpage 414
Abstract
In order to enhance the photovoltaic property of the CdS/CdSe co-sensitized quantum dot sensitized solar cells (QDSSCs), the surface of nanoporous TiO2 photoanode was modified by ultrathin Al2O3 layer before the deposition of quantum dots (QDs). The Al2O3 layer, dip-coated by 0.10 M Al precursor solution, exhibited the optimized performance in blocking the back-reaction of the photo-injected electrons from TiO2 conduction band (CB) to polysulfide electrolyte. Transient photocurrent spectra revealed that the electron lifetime (τe) increased significantly by introducing the ultrathin Al2O3 layer on TiO2 surface, whereas the electron diffusion coefficient (De) was not varied. As a result, the Voc increased from 0.487 to 0.545 V, without appreciable change in short circuit current (Jsc), thus inducing the enhancement of photovoltaic conversion efficiency (η) from 3.01% to 3.38%.
URI
http://dx.doi.org/10.5012/bkcs.2013.34.2.411
http://dspace.inha.ac.kr/handle/10505/33089
ISSN
0253-2964
Appears in Collections:
College of Natural Science(자연과학대학) > Chemistry (화학) > Local Access Journal Papers, Reports(화학 논문, 보고서)

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