Optimization of Temperature-Mediated Organic Semiconducting Crystals on Soft Polymer-Treated Gate Dielectrics

Title
Optimization of Temperature-Mediated Organic Semiconducting Crystals on Soft Polymer-Treated Gate Dielectrics
Authors
양회창
Issue Date
2013
Publisher
JOURNAL OF PHYSICAL CHEMISTRY C
Series/Report no.
JOURNAL OF PHYSICAL CHEMISTRY C; vol.117 no.48 startpage 25290 endpage 25297
Abstract
The temperature-mediated crystal structures of N,N′-ditridecylperylene- 3,4,9,10-tetracarboxylic diimide (PTCDI-C13) on organo-compatible polymer/ SiO2 bilayer dielectrics, including either physisorbed or grafted polystyrenes (PSs), were examined and correlated with their electrical characteristics in organic field-effect transistors (OFETs). The crystallinity of the PTCDI-C13 films on these dielectrics increased with increasing annealing temperature (TA), but the semiconductor? dielectric interfaces were also changed depending on the surface properties of the polymeric dielectrics. When TA was increased above the glass transition temperature of PSs, the 20?30 nm thick physisorbed PS layers became softened and further dewetted from the oxide surfaces, resulting in the subsidence and disconnection of PTCDI-C13 crystal grains into the undulated PS layers. In contrast, the PS monolayer grafted to the SiO2 surface could maintain a wetting layer even at TA = 200 °C, resulting in a hydroxyl free dielectric surface and highly π-conjugated structures of TA-mediated PTCDI-C13 crystals to achieve high-performance OFETs (field-effect mobility up to 0.2 cm2 V?1 s?1, threshold voltage ∼1.0 V, on?off current ratio >106, and no gate sweep hysteresis).
URI
dx.doi.org/10.1021/jp408097p
http://dspace.inha.ac.kr/handle/10505/32950
ISSN
1932-7447
Appears in Collections:
College of Engineering(공과대학) > Applied Organic Materials Engineering (유기응용재료공학) > Local Access Journal, Report (유기응용재료공학 논문, 보고서)

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