One-step fabrication and photoluminescence of alumina-sheathed GaN nanowires

Title
One-step fabrication and photoluminescence of alumina-sheathed GaN nanowires
Authors
이종무
Keywords
GaN, Nanowires, Alumina, Photoluminescence, Growth mechanism.
Issue Date
2013
Publisher
JOURNAL OF CERAMIC PROCESSING RESEARCH
Series/Report no.
JOURNAL OF CERAMIC PROCESSING RESEARCH; vol.14 startpage 453 endpage 458
Abstract
Gallium nitride (GaN)/alumina (Al2O3) core-shell structures were successfully synthesized by a simple and one-step thermal evaporation method. We characterized their morphology, microstructures, and optical properties by SEM, TEM, EDX, and photoluminescence (PL). The core-shell structures were comprised of a core of single crystalline, GaN nanowires surrounded by a shell of Al2O3 tubular structures. We proposed a base-growth process as the dominant mechanism for the growth of the core/shell nanowires. We have discussed the possible reason for the preferential formation of the Al2O3 shells on the outside of the core-shell structures. In regard to the core/shell structures, an emission peak of 3.3 eV was observed in the roomtemperature PL measurements in addition to the GaN-associated peaks, and was attributed to the Al2O3 shell.
URI
http://dspace.inha.ac.kr/handle/10505/32805
ISSN
1229-9162
Appears in Collections:
College of Engineering(공과대학) > Materials Science & Engineering (신소재공학) > Local Access Journal, Reports (신소재공학 논문, 보고서)

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