Effects of Pt capping and annealing on the photoluminescence properties of ZnO nanorods

Title
Effects of Pt capping and annealing on the photoluminescence properties of ZnO nanorods
Authors
이종무
Keywords
ZnO nanorods Pt capping H2 annealing Surface plasmonresonance Photoluminescence
Issue Date
2013
Publisher
MATERIALS LETTERS
Series/Report no.
MATERIALS LETTERS; vol.106 startpage 67 endpage 70
Abstract
Pt-capped ZnOnanorodsweresynthesizedbythethermalevaporationofamixtureofZnOandgraphite powder at900 1C followedbyPtsputter-depositionandthermalannealing.Photoluminescence(PL) showedthattheintensityofnear-bandedge(NBE)emissionofZnOnanorodswasenhancedsignificantly by Pt-cappingandannealinginaH2 atmosphere. TheintensityratioofNBEemissiontothedeeplevel emission, INBE/IDL of thePt-cappedZnOnanorodsafterannealinginaH2 atmosphere was ∼11times higher thanthatoftheunannealed,uncappedZnOnanorods.Theincreaseofthe INBE/IDL might bedueto a combinationofcarriertransferfromthedefectleveltotheFermilevelofPtnanoparticles,surface plasmon resonanceinPtnanoparticlesandhydrogenpassivatingdeepleveldefects.
URI
http://dx.doi.org/10.1016/j.matlet.2013.04.106
http://dspace.inha.ac.kr/handle/10505/32799
ISSN
0167-577X
Appears in Collections:
College of Engineering(공과대학) > Materials Science & Engineering (신소재공학) > Journal Papers, Reports(신소재공학 논문, 보고서)
Files in This Item:
34396.pdfDownload

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse