Improvement in Photo-Bias Stability of High-Mobility Indium Zinc Oxide Thin-Film Transistors by Oxygen High-Pressure Annealing

Title
Improvement in Photo-Bias Stability of High-Mobility Indium Zinc Oxide Thin-Film Transistors by Oxygen High-Pressure Annealing
Authors
최리노; 정재경
Keywords
High mobility, indium zinc oxide semiconductor, oxygen vacancy, photo-bias stability, thin-film transistors (TFTs).
Issue Date
2013
Publisher
IEEE ELECTRON DEVICE LETTERS
Series/Report no.
IEEE ELECTRON DEVICE LETTERS; vol.34 no.7 startpage 894 endpage 896
Abstract
This letter examines the effect of oxygen (O2) highpressure annealing (HPA) on indium zinc oxide (IZO) thinfilm transistors (TFTs) with a high-quality Al2O3 passivation layer. The IZO TFTs anneal under an O2 atmosphere at 9 atm exhibits a high field-effect mobility, low subthreshold gate swing, moderate threshold voltage (Vth), and high ION/OFF ratio of 30.4 cm2/Vs, 0.10 V/decade, 0.79 V, and 108, respectively. In addition, the O2 HPA-treated IZO TFT has superior reliability ( Vth= ?0.5 V) to that of the 0.2-atm-annealed device ( Vth= ?3.7 V) under negative bias illumination stress conditions. This improvement can be attributed to the reduced concentration of oxygen vacancy defects in the IZO channel layer during the O2 HPA treatment.
URI
http://dspace.inha.ac.kr/handle/10505/32780
ISSN
0741-3106
Appears in Collections:
College of Engineering(공과대학) > Materials Science & Engineering (신소재공학) > Journal Papers, Reports(신소재공학 논문, 보고서)
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