Influence of Etch Gas on High Density Plasma Etching of Polysilicon Thin Films with Nanometer-Sized Patterns

Title
Influence of Etch Gas on High Density Plasma Etching of Polysilicon Thin Films with Nanometer-Sized Patterns
Authors
Chung, C.W.
Keywords
MEMORY DEVICES, SILICON
Issue Date
2004-01
Publisher
ELECTROCHEMICAL SOC INC
Abstract
High density plasma etching of polysilicon thin films with nanometer-size patterns was performed in an inductively coupled plasma. The etch process of polysilicon films with a photoresist mask was characterized using Cl-2, C2F6, and HBr gas chemistries in terms of etch rate, etch selectivity, and etch profile. The fast etch rate of polysilicon films was obtained in Cl-2/Ar gas and the high selectivity of polysilicon to photoresist was found in HBr/Ar gas mixture. The etching of polysilicon films masked by photoresist with nanometer-size patterns was attempted with various etch gases, and an anisotropic etching of 60 nm sized pattern was achieved in HBr/Ar and C2F6/Ar plasmas.
URI
http://dspace.inha.ac.kr/handle/10505/20395
ISSN
1099-0062
Appears in Collections:
College of Engineering(공과대학) > Chemical Engineering (화학공학) > Journal Papers, Report (화학공학 논문, 보고서)
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