ENHANCEMENT OF DIAMOND NUCLEATION BY APPLYING SUBSTRATE BIAS IN ECR PLASMA CHEMICAL VAPOUR DEPOSITION

Title
ENHANCEMENT OF DIAMOND NUCLEATION BY APPLYING SUBSTRATE BIAS IN ECR PLASMA CHEMICAL VAPOUR DEPOSITION
Authors
Lee, C.M.
Keywords
diamond, chemical vapor deposition
Issue Date
1998-06
Publisher
Carbon
Abstract
Uniform diamond nucleation was achieved on a Si substrate over a large area using low pressure Electron Cyclotron Resonance microwave plasma chemical vapour deposition (CVD). Diamond nucleation density as high as 10(9) cm(-2) was obtained using a CH4/He gas mixture when the substrate was positively biased with respect to the grounded chamber wall. Radical densities higher than those with the CH4/H-2 gas mixture were obtained using the CH4/He gas mixture. A suitable positive bias voltage applied to the substrate with respect to the chamber enhances diamond nucleation. When a negative substrate bias voltage is applied, diamond nucleation is prohibited by high energy ion bombardment on the substrate. Also the dependence of diamond nucleation density on gas concentrations. substrate bias voltage and microwave power vias investigated.
URI
http://dspace.inha.ac.kr/handle/10505/20165
ISSN
0008-6223
Appears in Collections:
College of Engineering(공과대학) > Materials Science & Engineering (신소재공학) > Journal Papers, Reports(신소재공학 논문, 보고서)
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