Enhancement of electroluminescence in GaN-based light-emitting diodes by metallic nanoparticles

Title
Enhancement of electroluminescence in GaN-based light-emitting diodes by metallic nanoparticles
Authors
Sung, J.H.; Yang, J.S.; Kim, B.S.; Choi, C.H.; Lee, M.W.; Lee, S.G.; Park, S.G.; Lee, E.H.; O, B.H.
Keywords
electroluminescence, gallium compounds, III-V semiconductors
Issue Date
2010-06
Publisher
AMER INST PHYSICS
Abstract
The enhanced electroluminescence of GaN-based light-emitting diodes (LEDs) with noble metallic nanoparticles (MNPs) is demonstrated. The sample with well-designed Ag MNPs has shown the best performance enhancement of 126% in electroluminescent intensity compared with a conventional LED sample, even though the MNPs are placed at least 200 nm away from the quantum-well active layer. The MNPs provide enhanced photon scattering and coupling between localized surface plasmon resonance (LSPR) modes and photon modes internally trapped in a device. To investigate this effect, the peculiarities of the LSPR and the corresponding structural properties of the MNPs are discussed through the effective medium approach.
URI
http://dspace.inha.ac.kr/handle/10505/20101
ISSN
0003-6951
Appears in Collections:
College of Engineering(공과대학) > Information and Communication Engineering (정보통신공학) > Journal Papers, Reports(정보통신공학 논문, 보고서)
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