Two-dimensional carbon incorporation into Si(001): C amount and structure of Si(001)-c(4x4)

Title
Two-dimensional carbon incorporation into Si(001): C amount and structure of Si(001)-c(4x4)
Authors
Kim H; Kim W; Lee G; Koo JY
Keywords
SCANNING TUNNELING MICROSCOPE, C(4X4) RECONSTRUCTION
Issue Date
2005-02
Publisher
AMERICAN PHYSICAL SOC
Abstract
The C amount and the structure of the Si(001)-c(4 x 4) surface is studied using scanning tunneling microscopy (STM) and ab initio calculations. The c(4 x 4) phase is found to contain 1/8 monolayer C (1 C atom in each primitive unit cell). From the C amount and the symmetry of high-resolution STM images, it is inferred that the C atoms substitute the fourth-layer site below the dimer row. We construct a structure model relying on ab initio energetics and STM simulations. Each C atom induces an on-site dimer vacancy and two adjacent rotated dimers on the same dimer row. The c(4 x 4) phase constitutes the subsurface Si0.875C0.125 delta layer with two-dimensionally ordered C atoms.
URI
http://dspace.inha.ac.kr/handle/10505/1983
ISSN
0031-9007
Appears in Collections:
College of Natural Science(자연과학대학) > Physics (물리학) > Journal Papers, Peports(물리학 학술논문, 보고서)
Files in This Item:
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