Comparison of output power of InGaN laser diodes for different Al compositions in the AlGaN n-cladding layer

Title
Comparison of output power of InGaN laser diodes for different Al compositions in the AlGaN n-cladding layer
Authors
Ryu, H.Y.
Keywords
aluminium compounds, gallium compounds, III-V semiconductors, indium compounds
Issue Date
2009-05
Publisher
AMER INST PHYSICS
Abstract
The output power of InGaN multiple-quantum-well laser diodes (LDs) emitting at 405 nm wavelength is compared for several Al composition in the AlGaN n-cladding layer. The Al composition has been varied from 2% to 6% to study the effect of n-cladding refractive index on threshold current and slope efficiency of the LDs. As the Al composition in the AlGaN n-cladding layer increases, both threshold current and slope efficiency decrease. This behavior can be explained by the change in optical field distribution with refractive index of the AlGaN n-cladding layer. It is found that the Al composition of <= 4% would be advantageous for achieving more than 100 mW output power and high level of catastrophic optical damage.
URI
http://dspace.inha.ac.kr/handle/10505/1669
ISSN
0021-8979
Appears in Collections:
College of Natural Science(자연과학대학) > Physics (물리학) > Journal Papers, Peports(물리학 학술논문, 보고서)
Files in This Item:
Comparison.pdfDownload

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse