ALE(atomic layer epitaxy)법에 의한 p형 ZnO 박막성장과 전기적, 광학적 특성/

Title
ALE(atomic layer epitaxy)법에 의한 p형 ZnO 박막성장과 전기적, 광학적 특성/
Authors
박수영
Keywords
ALE
Issue Date
2007
Publisher
인하대학교
Abstract
Recently, remarkly concentration ZnO includes lots of good properties. ZnO has wurtzite structure and the highest melting point(2000℃) because of strong bonding between Zn & O compounds, and also has good resistance of the outter pressure and exposed radi
Description
1. 서론 = 1 2. 이론적 배경 = 2 2-1 ZnO 에피텍시 기술 = 2 2-1-1 고품위의 ZnO 에피층 성장기술 = 2 2-1-2 ZnO에피텍시 기술 = 4 2-1-3 P type ZnO 제조 기술 현황 = 4 2-1-4 ZnO의 장점 = 5 2-2 Fundamentals of ZnO = 6 2-2-1 The crystal structure of ZnO = 6 2-2-2 The physical properties of
URI
http://dspace.inha.ac.kr/handle/10505/11836
Appears in Collections:
College of Engineering(공과대학) > Materials Science & Engineering (신소재공학) > Theses(신소재공학 석박사 학위논문)
Files in This Item:
12358.pdfDownload

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse