MOSFET-Like Behavior of a-InGaZnO Thin-Film Transistors With Plasma-Exposed Source-Drain Bulk Region

Title
MOSFET-Like Behavior of a-InGaZnO Thin-Film Transistors With Plasma-Exposed Source-Drain Bulk Region
Authors
Jeong, J.; Hong, Y.; Jeong, J.K.; Park, J.S.; Mo, Y.G.
Keywords
a-InGaZnO, thin-film transistor (TFT), ATLAS simulation
Issue Date
2009-12
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Abstract
In this paper, we analyzed electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) with plasma-exposed source-drain (S/D) bulk region. The parasitic resistance and effective channel length characteristics exhibit similar behavior with that of crystalline silicon metal oxide-semiconductor field effect transistor (c-Si MOSFET) that has doped S/D bulk region. The transfer curves little changed with gate overlap variation, and the width-normalized parasitic resistance obtained from transmission line method was as low as 3 to 6 Omega. The effective channel length was shorter than the mask channel length and showed gate-to-source (V-GS) voltage dependency that is frequently observed for lightly doped drain (LDD) MOSFET. Experimental and simulation results showed that the plasma exposure caused an LDD-like doping effect in the S/D bulk region by inducing oxygen vacancy in the a-IGZO layer.
URI
http://dspace.inha.ac.kr/handle/10505/1945
ISSN
1551-319X
Appears in Collections:
College of Engineering(공과대학) > Materials Science & Engineering (신소재공학) > Journal Papers, Reports(신소재공학 논문, 보고서)
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