Stability enhancement of nanopillar structure for spin transfer magnetization switching using IrMn buffer layer

Title
Stability enhancement of nanopillar structure for spin transfer magnetization switching using IrMn buffer layer
Authors
Lee, J.C.; You, C.Y.
Keywords
MULTILAYERS
Issue Date
2006-04
Publisher
AMER INST PHYSICS
Abstract
We report here the effect of ultrathin IrMn buffer layer on the magnetic and spin transport properties of spintronic structure for current-induced magnetization switching. The insertion of the ultrathin (similar to 1 nm) IrMn buffer layer drastically enhanced the coercive field of the fixed ferromagnetic layer from 36 to 215 Oe. Interestingly, the ultrathin IrMn buffer layer even enhanced the magnetoresistance ratio about 30%, and consequently the spin polarization effect was enhanced by reducing the critical current density of magnetization switching from 3.13x10(8) to 1.16x10(8) A/cm(2).
URI
http://dspace.inha.ac.kr/handle/10505/1681
ISSN
0021-8979
Appears in Collections:
College of Natural Science(자연과학대학) > Physics (물리학) > Journal Papers, Peports(물리학 학술논문, 보고서)
Files in This Item:
Stability.pdfDownload

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse