Photoluminescence in phosphorous-implanted ZnO films

Title
Photoluminescence in phosphorous-implanted ZnO films
Authors
Park, J.Y.; Kim, S.S.
Keywords
Photoluminescence, ZnO films
Issue Date
2007-10
Publisher
AMER INST PHYSICS
Abstract
ZnO thin films prepared by pulsed laser deposition were implanted with phosphorous (P) using dose levels of 10(12)-10(14) ions/cm(2) at room temperature. The P-implanted films were subsequently annealed between 500 and 700 degrees C in oxygen ambient. The Hall effect measurements revealed a substantial reduction in the electron concentration of the P-implanted films without annealing, whereas the reduction was more pronounced with optimized rapid thermal annealing treatment. The photoluminescence spectra showed emissions associated with the shallow P-related acceptors at similar to 3.179, similar to 3.256, and similar to 3.325 eV as well as a strong red emission centered at similar to 1.85 eV originating from a donor-acceptor pair transition after annealing at 600 and 700 degrees C. These results indicate that the P dose level during ion implantation and the annealing temperature are key processing parameters that should be optimized to produce p-type ZnO films.
URI
http://dspace.inha.ac.kr/handle/10505/1673
ISSN
0021-8979
Appears in Collections:
College of Engineering(공과대학) > Materials Science & Engineering (신소재공학) > Journal Papers, Reports(신소재공학 논문, 보고서)
Files in This Item:
Photoluminescence.pdfDownload

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse