The effect of nanoscale nonuniformity of oxygen vacancy on electrical and reliability characteristics of HfO2 MOSFET devices

Title
The effect of nanoscale nonuniformity of oxygen vacancy on electrical and reliability characteristics of HfO2 MOSFET devices
Authors
Choi, R.
Keywords
charge trapping, conducting atomic force microscopy (C-AFM), hafnium oxide, oxygen vacancy
Issue Date
2008-01
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Abstract
To understand the influence of oxygen vacancies in HfO2 on the electrical and reliability characteristics, we have investigated area-dependent leakage-current characteristics of HfO2 with large-area device and conducting atomic force Microscopy (C-AFM). Unlike with the large-area analysis with typical capacitor and transistor, a clear evidence of oxygen vacancy was observed in nanoscale-area measurement using the C-AFM. Similar observations were made in various postdeposition annealing ambients to investigate the generation and reduction of oxygen vacancy in HfO2. With optimized postdeposition annealing for oxygen vacancy, significantly reduced charge trapping was observed in HfO2 nMOSFET.
URI
http://dspace.inha.ac.kr/handle/10505/1606
ISSN
0741-3106
Appears in Collections:
College of Engineering(공과대학) > Materials Science & Engineering (신소재공학) > Journal Papers, Reports(신소재공학 논문, 보고서)
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