PBTI-associated high-temperature hot carrier degradation of nMOSFETs with metal-gate/high-k dielectrics

Title
PBTI-associated high-temperature hot carrier degradation of nMOSFETs with metal-gate/high-k dielectrics
Authors
Choi, R.
Keywords
hot carrier (HC), metal-gate/high-k dielectrics, positive bias temperature instability (PBTI)
Issue Date
2008-04
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Abstract
Due to the increased physical dielectric thickness and reduced gate leakage in metal-gate/high-k devices, degradation caused by channel hot carriers (HCs) becomes more significant than positive bias temperature stress. In an analysis of metal-gate/high-k devices, accelerated channel HCs were found to induce permanent interface damage. Moreover, the overall threshold voltage shifts caused by HC stress were enhanced at higher temperatures, which is due to an association with positive bias temperature instability. Therefore, high-temperature HC stress has emerged as a dominant degradation factor in short-channel nMOSFETs with metal-gate/high-k dielectrics.
URI
http://dspace.inha.ac.kr/handle/10505/1605
ISSN
0741-3106
Appears in Collections:
College of Engineering(공과대학) > Materials Science & Engineering (신소재공학) > Journal Papers, Reports(신소재공학 논문, 보고서)
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