ffects of film stress modulation using TiN metal gate on stress engineering and its impact on device characteristics in metal gate/high-kappa dielectric SOI FinFETs

Title
ffects of film stress modulation using TiN metal gate on stress engineering and its impact on device characteristics in metal gate/high-kappa dielectric SOI FinFETs
Authors
Choi, R.
Keywords
high-k dielectric, metal-induced strain, silicon-on-insulator (SOI) fin-shaped field-effect transistors (FinFETs)
Issue Date
2008-05
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Abstract
In this letter, the effects of TiN-induced strain engineering on device characteristics for a metal gate/high-k silicon-on-insulator fin-shaped field-effect transistors were studied. From a convergent-beam electron-diffraction analysis and simulation study, a 3-nm TiN electrode was found to lead to significantly higher tensile stress on the Si substrate than a 20-nm TiN electrode. This high stress-induced fast bulk carrier generation results in the transient current-time characteristics. Therefore, 3- and 20-nm TiN electrodes are the excellent choice for nMOSFETs and pMOSFETs, respectively, which is from the standpoint of strain engineering, threshold voltage (V-th), and performance. Due to the metal-induced strain, I-dsat improvements of 15% and 12% for nMOSFETs and pMOSFETs, respectively, were achieved.
URI
http://dspace.inha.ac.kr/handle/10505/1604
ISSN
0741-3106
Appears in Collections:
College of Engineering(공과대학) > Materials Science & Engineering (신소재공학) > Journal Papers, Reports(신소재공학 논문, 보고서)
Files in This Item:
Effects of f.pdfDownload

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse