Effects of in situ O-2 plasma treatment on OFF-state leakage and reliability in metal-gate/high-k dielectric MOSFETs

Title
Effects of in situ O-2 plasma treatment on OFF-state leakage and reliability in metal-gate/high-k dielectric MOSFETs
Authors
Chio, R.
Keywords
gate-induced drain leakage (GIDL), hot-carrier reliability, in situ O-2 plasma, metal-gate/high-k
Issue Date
2008-06
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Abstract
The effects of in situ O-2 plasma treatment on device characteristics and reliability of metal-gate/high-k devices are investigated systematically. It was found that the O-2 plasma treatment can be employed for mitigating the formation of a leakage path between the high-k dielectric and the capping nitride layer. It also did not change the threshold voltage (V-th), carrier mobility, or equivalent oxide thickness. Compared with the control samples, the O-2 plasma-treated samples achieved a 20-times lower OFF-state current and enhanced hot-carrier-injection stress immunity.
URI
http://dspace.inha.ac.kr/handle/10505/1603
ISSN
0741-3106
Appears in Collections:
College of Engineering(공과대학) > Materials Science & Engineering (신소재공학) > Journal Papers, Reports(신소재공학 논문, 보고서)
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