Behaviors of emission wavelength shift in AlInGaN-based green laser diodes

Title
Behaviors of emission wavelength shift in AlInGaN-based green laser diodes
Authors
Ryu, H.Y.
Keywords
gallium compounds, GaN, laser diode (LD), light-emitting diodes (LEDs)
Issue Date
2008-08
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Abstract
InGaN quantum-well (QW) green laser diodes (LDs) with an emission wavelength of 483.7 nm were characterized by controlling the injection pulsewidth. The emission wavelength of LDs showed a large blueshift (> 20 nm) of spontaneous emission peak with increasing injection current below the threshold current. The huge blueshift was ascribed to the deep In localization states and the strong piezoelectric field in the green InGaN QW structure with higher In contents than conventional violet/blue InGaN QWs. However, the lasing wavelength of LDs was slightly redshifted by increasing the injection pulsewidth due to the thermal heating effects.
URI
http://dspace.inha.ac.kr/handle/10505/1602
ISSN
0741-3106
Appears in Collections:
College of Natural Science(자연과학대학) > Physics (물리학) > Journal Papers, Peports(물리학 학술논문, 보고서)
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