Pentacene TFT With Reduced Threshold Voltage Using PMMA-co-MAA/Sol-Gel-Derived TiO2 Composite Insulator

Title
Pentacene TFT With Reduced Threshold Voltage Using PMMA-co-MAA/Sol-Gel-Derived TiO2 Composite Insulator
Authors
Park, B.J.; Choi, H.J.
Keywords
Insulator, organic thin-film transistors (TFTs) (OTFTs), sol-gel, TiO2
Issue Date
2009-11
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Abstract
We report improvements in the characteristics of pentacene thin-film transistors (TFTs) achieved by using a poly(methylmethacrylate-co-methacrylic acid) (PMMA-co-MAA)/sol-gel-derived TiO2 composite insulator. The gate-leakage current of TFTs containing this insulator is comparable to that of devices composed of bare PMMA-co-MAA. The reduction in the threshold voltage is the most pronounced improvement observed herein (compared to the variations of other characteristic parameters). This can be explained by the negative surface potential of the sol-gel-derived TiO2 film.
URI
http://dspace.inha.ac.kr/handle/10505/1600
ISSN
0741-3106
Appears in Collections:
College of Engineering(공과대학) > Polymer Science and Engineering (고분자공학) > Journal Papers, Reports(고분자공학 논문, 보고서)
Files in This Item:
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