Pulsed I-d-V-g Methodology and Its Application to Electron-Trapping Characterization and Defect Density Profiling

Title
Pulsed I-d-V-g Methodology and Its Application to Electron-Trapping Characterization and Defect Density Profiling
Authors
Choi, Rino
Keywords
Fast transient charge trapping, high-kappa, pulse I-V
Issue Date
2009-06
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Abstract
The pulsed current-voltage (I-V) measurement technique with pulse times ranging from similar to 17 ns to similar to 6 ms was employed to study the effect-of fast transient charging on the threshold voltage shift Delta V-t of MOSFETs. The extracted Delta V-t values are found to be strongly dependent on the band bending of the dielectric stack defined by the high-kappa. and interfacial layer dielectric constants and thicknesses, as well as applied voltages. Various hafnium-based gate stacks were found to exhibit a similar trap density profile.
URI
http://dspace.inha.ac.kr/handle/10505/1579
ISSN
0018-9383
Appears in Collections:
College of Engineering(공과대학) > Materials Science & Engineering (신소재공학) > Journal Papers, Reports(신소재공학 논문, 보고서)
Files in This Item:
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