Inductively coupled plasma etching of indium zinc oxide thin films with HBr/Ar discharges

Title
Inductively coupled plasma etching of indium zinc oxide thin films with HBr/Ar discharges
Authors
Lee, D.Y.; Cho, H.N.; Chung, C.W.
Keywords
ZNO FILMS, CHEMISTRIES
Issue Date
2008-09
Publisher
ELECTROCHEMICAL SOC INC
Abstract
High density plasma etching of indium zinc oxide (IZO) thin films was performed in HBr/Ar gas mix. As HBr concentration increased, the etch rate was decreased and etch profile was improved. The high degree of etch anisotropy was achieved with decreasing dc-bias voltage and increasing gas pressure. The formation of protective layer, which had a strong effect on the etch profile, was confirmed by surface analyses. The X-ray photoelectron spectroscopy revealed the formation of InBr3 and ZnBr2 compounds. It could be concluded that the etching of IZO films in HBr/Ar plasma was governed by ion sputtering along with chemical assistance.
URI
http://dspace.inha.ac.kr/handle/10505/1569
ISSN
0013-4651
Appears in Collections:
College of Engineering(공과대학) > Chemical Engineering (화학공학) > Journal Papers, Report (화학공학 논문, 보고서)
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