Origin of tensile stress in the Si substrate induced by TiN/HfO2 metal gate/high-k dielectric gate stack

Title
Origin of tensile stress in the Si substrate induced by TiN/HfO2 metal gate/high-k dielectric gate stack
Authors
Choi, R.
Keywords
tensile stress, Si, TiN/HfO2, dielectric
Issue Date
2008-10
Publisher
American Institute of Physics
Abstract
The tensile stress induced by the metal TiN film in the atomic layer deposited HfO2 /TiN stacks has been found from the crystallite coalescence mechanism of the Volmer–Weber-type growth mode at the early stage of the TiN film formation. The higher tensile stress induced by 3 nm TiN film than that by the 20 nm TiN film resulted from the smaller grain size and the [200] orientation of the TiN layer. Electron energy loss spectrum profile shows that there is no significant elemental interdiffusion between HfO2 and TiN, which could contribute to stress relaxation.
URI
http://dspace.inha.ac.kr/handle/10505/1527
ISSN
0003-6951
Appears in Collections:
College of Engineering(공과대학) > Materials Science & Engineering (신소재공학) > Journal Papers, Reports(신소재공학 논문, 보고서)
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