Voltage control of in-plane magnetic anisotropy in ultrathin Fe/n-GaAs(001) Schottky junctions

Title
Voltage control of in-plane magnetic anisotropy in ultrathin Fe/n-GaAs(001) Schottky junctions
Authors
You, C.-Y.
Keywords
voltage, Fe/n-GaAs(001), Schottky effect
Issue Date
2009-01
Publisher
American Institute of Physics
Abstract
We report on the realization of voltage control of in-plane magnetic anisotropy at room temperature in ultrathin Fe/n-GaAs(001) Schottky junctions. Clear voltage-induced changes in magnetic anisotropy were observed in a Kerr ellipticity hysteresis loop using a lock-in modulation technique. The maximum change reached 4.5% of the saturation ellipticity under the application of a sinusoidal voltage signal of 1 V peak-to-peak in an Fe layer with a thickness of 0.64 nm. These results reveal the feasibility of controlling the in-plane magnetization process by the use of a perpendicular electric field. This can be a useful technique in ultralow power magnetization switching.
URI
http://dspace.inha.ac.kr/handle/10505/1524
ISSN
0003-6951
Appears in Collections:
College of Natural Science(자연과학대학) > Physics (물리학) > Journal Papers, Peports(물리학 학술논문, 보고서)
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