Performance and reliability improvement of HfSiON gate dielectrics using chlorine plasma treatment

Title
Performance and reliability improvement of HfSiON gate dielectrics using chlorine plasma treatment
Authors
Kim, Tea Wan; Kim, Beom Seok; Choi, Rino
Keywords
HfSiON, dielectrics, dielectrics
Issue Date
2009-01
Publisher
American Institute of Physics
Abstract
The effects of chlorine plasma treatment on HfSiON gate dielectrics were investigated with respect to device performance and reliability characteristics. The chlorine plasma treatment was performed on atomic layer deposited HfSiON films to remove the residual carbon content. The optimal chlorine plasma treatment is shown to lower gate leakage current density without increasing equivalent oxide thickness of the gate stack. Secondary ion mass spectroscopy depth profiling showed that the carbon residue in HfSiON was reduced by the chlorine plasma treatment. It is demonstrated that an optimized chlorine plasma treatment improves the transistor Ion-Ioff characteristics and reduces negative-bias temperature instability.
URI
http://dspace.inha.ac.kr/handle/10505/1522
Appears in Collections:
College of Engineering(공과대학) > Materials Science & Engineering (신소재공학) > Journal Papers, Reports(신소재공학 논문, 보고서)
Files in This Item:
Performance.pdfDownload

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse