Stress field analysis to understand the breakdown characteristics of stacked high-k dielectrics

Title
Stress field analysis to understand the breakdown characteristics of stacked high-k dielectrics
Authors
Choi, Rino
Keywords
stress field, dielectrics
Issue Date
2009-04
Publisher
American Institute of Physics
Abstract
The validity of the stress biases used in reliability studies of high-k dielectric is discussed by analyzing the stress biases used in previous works. For single layer dielectrics, stress biases near the time zero dielectric breakdown point have been used to reduce the test time. However, stacked dielectrics need a more careful approach to avoid overstress. We show that the majority of earlier work on the reliability of high-k dielectric used high electric field and those results may not be optimal for predicting intrinsic reliability characteristics. A simple guideline to avoid overstress is provided.
URI
http://dspace.inha.ac.kr/handle/10505/1514
ISSN
0003-6951
Appears in Collections:
College of Engineering(공과대학) > Materials Science & Engineering (신소재공학) > Journal Papers, Reports(신소재공학 논문, 보고서)
Files in This Item:
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