Rate equation analysis of efficiency droop in InGaN light-emitting diodes

Title
Rate equation analysis of efficiency droop in InGaN light-emitting diodes
Authors
Ryu, Han-Youl
Keywords
InGaN, light emitting diodes
Issue Date
2009-08
Publisher
American Institute of Physics
Abstract
Efficiency droop in InGaN light-emitting diodes (LEDs) is analyzed based on the rate equation model. By using the peak point of the efficiency versus current-density relation as the parameters of the rate equation analysis, internal quantum efficiency and each recombination current at arbitrary current density can be unambiguously determined without any knowledge of A, B, and C coefficients. The theoretical analysis is compared with measured efficiency of a LED sample and good agreement between the model and experiment is found. The investigation of recombination coefficients shows that Auger recombination alone is not sufficient to explain the efficiency droop of InGaN LEDs.
URI
http://dspace.inha.ac.kr/handle/10505/1509
ISSN
0003-6951
Appears in Collections:
College of Natural Science(자연과학대학) > Physics (물리학) > Journal Papers, Peports(물리학 학술논문, 보고서)
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