MAGNETIC BARRIERS, BALLISTIC REGIME, MAGNETORESISTANCE
American Institute of Physics
The authors have investigated the magnetoresistance of ferromagnet-semiconductor devices in an
InAs two-dimensional electron gas system in which the magnetic field has a sinusoidal profile. The
magnetoresistance of their device is large. The longitudinal resistance has an additional contribution
which is odd in applied magnetic field. It becomes even negative at low temperature where the
transport is ballistic. Based on the numerical analysis, they confirmed that their data can be
explained in terms of the local Hall effect due to the profile of negative and positive field regions.
This device may be useful for future spintronic applications.