Local Hall effect in hybrid ferromagnetic/semiconductor devices

Title
Local Hall effect in hybrid ferromagnetic/semiconductor devices
Authors
Lee, B.C.
Keywords
MAGNETIC BARRIERS, BALLISTIC REGIME, MAGNETORESISTANCE
Issue Date
2007-01
Publisher
American Institute of Physics
Abstract
The authors have investigated the magnetoresistance of ferromagnet-semiconductor devices in an
InAs two-dimensional electron gas system in which the magnetic field has a sinusoidal profile. The
magnetoresistance of their device is large. The longitudinal resistance has an additional contribution
which is odd in applied magnetic field. It becomes even negative at low temperature where the
transport is ballistic. Based on the numerical analysis, they confirmed that their data can be
explained in terms of the local Hall effect due to the profile of negative and positive field regions.
This device may be useful for future spintronic applications.
URI
http://dspace.inha.ac.kr/handle/10505/1489
Appears in Collections:
College of Natural Science(자연과학대학) > Physics (물리학) > Journal Papers, Peports(물리학 학술논문, 보고서)
Files in This Item:
Local.pdfDownload

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse